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| AO4836 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4836 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. It is ESD protected. AO4836 is Pbfree (meets ROHS & Sony 259 specifications). AO4836L is a Green Product ordering option. AO4836 and AO4836L are electrically identical. Features VDS (V) = 30V ID = 7.2A RDS(ON) < 24m (VGS = 10V) RDS(ON) < 40m (VGS = 4.5V) ESD rating: 1500V (HBM) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C A Current ID TA=70C Pulsed Drain Current B Maximum 30 20 7.2 6.1 30 2 1.44 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 55 92 37 Max 62.5 110 50 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4836 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=7.2A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.2A TJ=125C 10 1 20 2 20 29 30 18 0.77 Min 30 1 5 10 3 24 35 40 1 3 630 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 522 110 75 2.1 11 5.3 1.9 4 4.7 4.9 16.2 3.5 15.7 7.9 3 15 7 VGS=10V, VDS=15V, ID=7.2A VGS=10V, VDS=15V, RL=2.1, RGEN=3 IF=7.2A, dI/dt=100A/s IF=7.2A, dI/dt=100A/s 2 7 10 22 7 20 10 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. Rev 0: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10V 5V 4.5V 4V ID(A) 20 16 12 VDS=5V 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 8 4 125C 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 40 Normalized On-Resistance 35 RDS(ON) (m) 30 25 20 15 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 25 50 75 100 125 150 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=6A VGS=10V ID=7.2A 70 1.0E+01 ID=7.2A 60 50 RDS(ON) (m) 125C 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E+00 1.0E-01 IS Amps 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. AO4836 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics VDS=15V ID=7.2A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10 ID (Amps) 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 VDS (Volts) 10 TJ(Max)=150C TA=25C 100s 10s Power W 40 TJ(Max)=150C TA=25C 30 20 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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